| PART |
Description |
Maker |
| N02L63W3AB25I N02L63W3AB5IT N02L63W3A |
2 Mb Ultra-Low Power Asynchronous CMOS SRAM
2 Mb, 3 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tape and Reel; Qty per Container: 2500 128K X 16 STANDARD SRAM, 70 ns, PBGA48
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 16bit
|
ON Semiconductor
|
| M65609ENBSP M65609E MMDJ-65609EV-40 MMDJ-65609EV-4 |
Rad Hard 3.3 Volt 128Kx8 Very Low Power CMOS SRAM
From old datasheet system
Rad. Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM
|
ATMEL Corporation
|
| AS5C4009LLDG-100/XT AS5C4009LLDG-100/IT AS5C4009LL |
512K*8 SRAM ultra Low power SRAM AVAILABLE AS MILITARY SPECIFICATION
x8 SRAM x8的SRAM
|
Austin Semiconductor, Inc
|
| V62C3801024L-100T V62C3801024LL-85V V62C3801024L V |
High Temp Tested PC357N5TJ00F
Ultra Low Power 128K x 8 CMOS SRAM 128K的超低功耗8 CMOS SRAM
|
MOSEL[Mosel Vitelic Corp]
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic, Corp.
|
| IS65WV25616BLL-70TA2 IS65WV25616BLL-55TLA1 IS65WV2 |
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
|
Integrated Silicon Solution, Inc.
|
| GE28F320W30B70 GE28F320W30B85 RD28F6408W30T85 28F6 |
Segmented Alphanumeric LED; Display Technology:LED; No. of Digits/Alpha:1; Body Material:GaAsP; LED Color:Red; Leaded Process Compatible:Yes; Luminous Intensity:7.5mcd RoHS Compliant: Yes 2M X 16 FLASH 1.8V PROM, PBGA56
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 2M X 16 FLASH 1.8V PROM, PBGA56
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) SPECIALTY MEMORY CIRCUIT, PBGA80
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 1.8伏英特尔无线闪存伏的I / O和SRAM（宽30
|
Intel, Corp.
Intel Corp.
|
| IC62VV12816LL IC62VV12816L IC62VV12816L-70B IC62VV |
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
128Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM
70ns; 1.8V; 128K x 16 ultra low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| IS62LV12816BLL IS62LV12816BLL-10B IS62LV12816BLL-1 |
x16 SRAM x16的SRAM
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc
|
| BYT230PIV1000 BYT231PIV1000 |
Ultra low drop-low noise BiCMOS voltage regulators low ESR capacitors compatible
Ultra low drop-low noise BiCMOS 300 mA volt. reg. for use with very low ESR output capacitor 与独立二极管组成的阵列|的SOT - 227B
|
STMicroelectronics N.V.
|
| AS5C4009LLCW-100883C AS5C4009LLCW-100IT AS5C4009LL |
512K x 8 SRAM - ultra low power
|
Austin Semiconductor
|
| IC62VV25616LL IC62VV25616L IC62VV25616LL-70TI IC62 |
OSC 5V 14PIN TTL 256Kx161.8V和超低功耗CMOS静态RAM
256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM 256Kx161.8V和超低功耗CMOS静态RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
70ns; 1.8V; 256K x 16 ultra low power CMOS static RAM
|
Integrated Circuit Solu...
Fuji Electric Holdings Co., Ltd.
ICSI[Integrated Circuit Solution Inc]
|
| SD18U128 |
Ultra Low Power 128K x 8 CMOS SRAM
|
Soft Device
|
